JPS6148252B2 - - Google Patents
Info
- Publication number
- JPS6148252B2 JPS6148252B2 JP56079389A JP7938981A JPS6148252B2 JP S6148252 B2 JPS6148252 B2 JP S6148252B2 JP 56079389 A JP56079389 A JP 56079389A JP 7938981 A JP7938981 A JP 7938981A JP S6148252 B2 JPS6148252 B2 JP S6148252B2
- Authority
- JP
- Japan
- Prior art keywords
- alignment
- photomask substrate
- view
- field
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 description 12
- 235000012431 wafers Nutrition 0.000 description 8
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56079389A JPS57194530A (en) | 1981-05-27 | 1981-05-27 | Positioning of photomask substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56079389A JPS57194530A (en) | 1981-05-27 | 1981-05-27 | Positioning of photomask substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57194530A JPS57194530A (en) | 1982-11-30 |
JPS6148252B2 true JPS6148252B2 (en]) | 1986-10-23 |
Family
ID=13688501
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56079389A Granted JPS57194530A (en) | 1981-05-27 | 1981-05-27 | Positioning of photomask substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57194530A (en]) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3796089B2 (ja) * | 2000-02-14 | 2006-07-12 | 新光電気工業株式会社 | 薄板の位置決め装置 |
-
1981
- 1981-05-27 JP JP56079389A patent/JPS57194530A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS57194530A (en) | 1982-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0061536B1 (en) | Method of manufacturing a semiconductor device having improved alignment marks and alignment marks for said method | |
CN1246201A (zh) | 对准集成电路管芯用的基准 | |
US5837404A (en) | Fabrication of zero layer mask | |
JPH0450730B2 (en]) | ||
JPS6148252B2 (en]) | ||
CN116794946A (zh) | 光罩及光刻方法 | |
JP3587712B2 (ja) | 保護ダミーパターンを有する半導体製造用アライメントマーク構造 | |
US6379848B1 (en) | Reticle for use in photolithography and methods for inspecting and making same | |
JPS623943B2 (en]) | ||
JPH05341499A (ja) | 縮小投影露光装置用レチクル | |
JPH07111952B2 (ja) | ホトリソグラフィー工程におけるガラスマスク | |
JPH01304721A (ja) | 標識を有する半導体基板 | |
JPH0619120A (ja) | レチクルとそのレチクルを用いた半導体装置およびその製造方法 | |
JPH056176B2 (en]) | ||
JPH09214079A (ja) | 配線基板 | |
JPH0516664B2 (en]) | ||
JP2764925B2 (ja) | 半導体装置の製造方法 | |
JPS623944B2 (en]) | ||
JPH02299251A (ja) | 半導体集積回路の製造方法 | |
JPH0851052A (ja) | 電子ビーム露光方法 | |
JPH0226368B2 (en]) | ||
JPS6239814B2 (en]) | ||
JPS60136326A (ja) | 半導体装置 | |
JPH02125256A (ja) | フォトマスク | |
JPH05291106A (ja) | 半導体ウエハーの露光方法 |